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IRF7201TRPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Tc
Turn Off Delay Time 21 ns
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Current - Continuous Drain (Id) @ 25℃ 7.3A Tc
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 30mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA LOW RESISTANCE
Voltage - Rated DC 30V
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 7.3A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 7.3A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Rise Time 35ns
Vgs (Max) ±20V
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 7A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 70 mJ
Recovery Time 73 ns
Nominal Vgs 1 V
Length 4.9784mm
Height 1.4986mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
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