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IRF7324TRPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Infineon
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 9A
Number of Elements 2 Elements
Turn Off Delay Time 170 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 18mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Voltage - Rated DC -20V
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -9A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number IRF7324PBF
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 17 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2940pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 5V
Rise Time 36ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 190 ns
Continuous Drain Current (ID) -9A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 71A
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 270 ns
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
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