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IRF7328TRPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Infineon
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 8A
Number of Elements 2 Elements
Turn Off Delay Time 198 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 21MOhm
Additional Feature ULTRA LOW RESISTANCE
Voltage - Rated DC -30V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating -8A
Base Part Number IRF7328PBF
Row Spacing 6.3 mm
Number of Channels 2Channels
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 13 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2675pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Rise Time 15ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 98 ns
Continuous Drain Current (ID) -8A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage -30V
FET Technology METAL-OXIDE SEMICONDUCTOR
Recovery Time 56 ns
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Nominal Vgs -2.5 V
Height 1.75mm
Length 4.9784mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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