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IRF7331PBF Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Infineon | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 7A | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | HEXFET® | |
| Published | 2004 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | IRF7331PBF |
| JESD-30 Code | R-PDSO-G8 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power - Max | 2W | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 30m Ω @ 7A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1340pF @ 16V | |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 20V | |
| JEDEC-95 Code | MS-012AA | |
| Drain Current-Max (Abs) (ID) | 7A | |
| Drain-source On Resistance-Max | 0.03Ohm | |
| DS Breakdown Voltage-Min | 20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 2W | |
| FET Feature | Logic Level Gate | |
| RoHS Status | ROHS3 Compliant |
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IRF7331PBF Documents
Download datasheets and manufacturer documentation for IRF7331PBF
- PCN PackagingMult Dev Lot No Format Chg 6/Apr/2018 Package Drawing Update 19/Aug/2015
- PCN Part Status ChangePkg Type Disc 16/May/2016
- DatasheetsIRF7331PbF
- Other Related DocumentsIR Part Numbering System
- PCN Assembly/OriginAlternate Assembly Site 15/Apr/2014
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