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IRF7413ZTRPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 13A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta
Turn Off Delay Time 11 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2005
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
Termination SMD/SMT
ECCN Code EAR99
Resistance 10MOhm
Voltage - Rated DC 30V
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 13A
Row Spacing 6.3 mm
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 8.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1210pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 6.3ns
Vgs (Max) ±20V
Fall Time (Typ) 3.8 ns
Continuous Drain Current (ID) 13A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 32 mJ
Recovery Time 36 ns
Nominal Vgs 1.8 V
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
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