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IRF7424TRPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 11A Ta
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta
Turn Off Delay Time 150 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
ECCN Code EAR99
Resistance 13.5MOhm
Voltage - Rated DC -30V
Current Rating -11A
Row Spacing 6.3 mm
Number of Channels 1Channel
Element Configuration Single
Power Dissipation 2.5W
Turn On Delay Time 15 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 13.5m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4030pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 23ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Forward Voltage -1.2V
Fall Time (Typ) 76 ns
Continuous Drain Current (ID) -11A
Threshold Voltage -2.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Dual Supply Voltage -30V
Recovery Time 60 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs -2.5 V
Height 1.75mm
Length 4.9784mm
Width 4.05mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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