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IRF7555TRPBF Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Infineon | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | |
| Number of Pins | 8Pins | |
| Supplier Device Package | Micro8™ | |
| Current - Continuous Drain (Id) @ 25℃ | 4.3A | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 60 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2005 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Resistance | 55mOhm | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | -20V | |
| Max Power Dissipation | 1.25W | |
| Current Rating | -4.3A | |
| Base Part Number | IRF7555PBF | |
| Element Configuration | Dual |
| Power Dissipation | 1.25W | |
| Turn On Delay Time | 10 ns | |
| Power - Max | 1.25W | |
| FET Type | 2 P-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4.3A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1066pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 5V | |
| Rise Time | 46ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Fall Time (Typ) | 64 ns | |
| Continuous Drain Current (ID) | -4.3A | |
| Gate to Source Voltage (Vgs) | 12V | |
| Drain to Source Breakdown Voltage | -20V | |
| Input Capacitance | 1.066nF | |
| FET Feature | Logic Level Gate | |
| Drain to Source Resistance | 55mOhm | |
| Rds On Max | 55 mΩ | |
| Height | 860μm | |
| Length | 3mm | |
| Width | 3mm | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Lead Free |
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IRF7555TRPBF Documents
Download datasheets and manufacturer documentation for IRF7555TRPBF
- DatasheetsIRF7555PbF
- Other Related DocumentsIR Part Numbering System
- PCN Obsolescence/ EOLGen 8 Rev2 08/Jul/2011
- ConflictMineralStatementInfineon-company-51.pdf
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