IRF7904TRPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Infineon
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 7.6A 11A
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Resistance 16.2MOhm
Max Power Dissipation 2W
Terminal Form GULL WING
Base Part Number IRF7904PBF
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Power - Max 1.4W 2W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 16.2m Ω @ 7.6A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 11nC @ 4.5V
Continuous Drain Current (ID) 11A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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