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IRF7904TRPBF Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Infineon | |
| Factory Lead Time | 12 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Number of Pins | 8Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 7.6A 11A | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | HEXFET® | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Resistance | 16.2MOhm | |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING | |
| Base Part Number | IRF7904PBF | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 2W | |
| Power - Max | 1.4W 2W | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 16.2m Ω @ 7.6A, 10V | |
| Vgs(th) (Max) @ Id | 2.25V @ 25μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 910pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V | |
| Continuous Drain Current (ID) | 11A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain to Source Breakdown Voltage | 30V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Height | 1.4986mm | |
| Length | 4.9784mm | |
| Width | 3.9878mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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IRF7904TRPBF Documents
Download datasheets and manufacturer documentation for IRF7904TRPBF
- PCN PackagingPacking Material Update 16/Sep/2016 Barcode Label Update 24/Feb/2017 Mult Dev Label Chgs 18/Feb/2020
- DatasheetsIRF7904PbF
- PCN Assembly/OriginBackend Wafer Transfer 23/Oct/2013
- Other Related DocumentsIR Part Numbering System
- ConflictMineralStatementInfineon-company-51.pdf
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