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IRF7907TRPBF Tech Specifications
Category | Transistors - FETs, MOSFETs - Arrays | |
Manufacturer | Infineon | |
Factory Lead Time | 12 Weeks | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
Number of Pins | 8Pins | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 9.1A 11A | |
Number of Elements | 2 Elements | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tape & Reel (TR) | |
Series | HEXFET® | |
Published | 2008 | |
JESD-609 Code | e3 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 8Terminations | |
ECCN Code | EAR99 | |
Terminal Finish | Matte Tin (Sn) | |
Max Power Dissipation | 2W | |
Terminal Form | GULL WING | |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Base Part Number | IRF7907PBF | |
Element Configuration | Dual | |
Operating Mode | ENHANCEMENT MODE | |
Power Dissipation | 2W | |
FET Type | 2 N-Channel (Dual) | |
Rds On (Max) @ Id, Vgs | 16.4m Ω @ 9.1A, 10V | |
Vgs(th) (Max) @ Id | 2.35V @ 25μA | |
Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V | |
Continuous Drain Current (ID) | 11A | |
Gate to Source Voltage (Vgs) | 20V | |
Drain to Source Breakdown Voltage | 30V | |
Avalanche Energy Rating (Eas) | 15 mJ | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
FET Feature | Logic Level Gate | |
Height | 1.4986mm | |
Length | 4.9784mm | |
Width | 3.9878mm | |
Radiation Hardening | No | |
RoHS Status | ROHS3 Compliant | |
Lead Free | Lead Free |
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IRF7907TRPBF Documents
Download datasheets and manufacturer documentation for IRF7907TRPBF
- PCN PackagingPacking Material Update 16/Sep/2016 Package Drawing Update 19/Aug/2015
- DatasheetsIRF7907PbF
- Other Related DocumentsPart Number Guide IR Part Numbering System
- PCN Assembly/OriginWarehouse Transfer 29/Jul/2015
- Simulation ModelsIRF7907PBF Saber Model
- ConflictMineralStatementInfineon-company-51.pdf
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