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IRFH4251DTRPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Infineon
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 64A 188A
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series FASTIRFET™
Published 2013
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Max Power Dissipation 63W
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Power - Max 31W 63W
FET Type 2 N-Channel (Dual), Schottky
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds 1314pF @ 13V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Drain to Source Voltage (Vdss) 25V
Continuous Drain Current (ID) 188A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 45A
Drain-source On Resistance-Max 0.0046Ohm
Avalanche Energy Rating (Eas) 61 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 900μm
Length 6mm
Width 5mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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