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IRFHM830TRPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-VQFN Exposed Pad
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 21A Ta 40A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.7W Ta 37W Tc
Turn Off Delay Time 13 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Resistance 6MOhm
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.7W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 2155pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 25ns
Vgs (Max) ±20V
Fall Time (Typ) 9.2 ns
Continuous Drain Current (ID) 21A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 40A
Drain to Source Breakdown Voltage 30V
Nominal Vgs 1.8 V
Height 1mm
Length 3.3mm
Width 3.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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