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IRFI3205PBF Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 64A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 63W Tc
Turn Off Delay Time 43 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 8mOhm
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Voltage - Rated DC 55V
Current Rating 64A
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 63W
Case Connection ISOLATED
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 34A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 100ns
Vgs (Max) ±20V
Fall Time (Typ) 70 ns
Continuous Drain Current (ID) 64A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 56A
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Avalanche Energy Rating (Eas) 480 mJ
Recovery Time 170 ns
Isolation Voltage 2kV
Nominal Vgs 4 V
Height 9.8mm
Length 10.7442mm
Width 4.826mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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