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IRFP250NPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 30A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 214W Tc
Turn Off Delay Time 41 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series HEXFET®
Published 2004
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Resistance 75mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Voltage - Rated DC 200V
Peak Reflow Temperature (Cel) 250
Current Rating 30A
Time@Peak Reflow Temperature-Max (s) 30
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 214W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2159pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
Rise Time 43ns
Vgs (Max) ±20V
Fall Time (Typ) 33 ns
Continuous Drain Current (ID) 30A
JEDEC-95 Code TO-247AC
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Dual Supply Voltage 200V
Recovery Time 279 ns
Nominal Vgs 4 V
Height 20.2946mm
Length 15.875mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
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