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IRG4BC30KDPBF Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Infineon
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2.21V
Number of Elements 1 Element
Test Conditions 480V, 16A, 23 Ω, 15V
Turn Off Delay Time 160 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 100W
Current Rating 28A
Element Configuration Single
Power Dissipation 100W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 60 ns
Transistor Application MOTOR CONTROL
Rise Time 42ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 28A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-220AB
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 16A
Turn Off Time-Nom (toff) 370 ns
Gate Charge 67nC
Current - Collector Pulsed (Icm) 56A
Td (on/off) @ 25°C 60ns/160ns
Switching Energy 600μJ (on), 580μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 120ns
Height 8.763mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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