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IRG4PC50FDPBF Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Infineon
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.6V
Number of Elements 1 Element
Test Conditions 480V, 39A, 5 Ω, 15V
Turn Off Delay Time 240 ns
Operating Temperature -55°C~150°C TJ
Packaging Tray
Published 2001
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST SOFT RECOVERY
Voltage - Rated DC 600V
Max Power Dissipation 200W
Current Rating 70A
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 55 ns
Transistor Application POWER CONTROL
Rise Time 25ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 70A
Reverse Recovery Time 50 ns
JEDEC-95 Code TO-247AC
Turn On Time 86 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 39A
Turn Off Time-Nom (toff) 660 ns
Gate Charge 190nC
Current - Collector Pulsed (Icm) 280A
Td (on/off) @ 25°C 55ns/240ns
Switching Energy 1.5mJ (on), 2.4mJ (off)
Fall Time-Max (tf) 210ns
Height 20.7mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IRG4PC50FDPBF Documents

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