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IRG4PC50UDPBF Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Infineon
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 38.000013g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 2V
Number of Elements 1 Element
Test Conditions 480V, 27A, 5 Ω, 15V
Turn Off Delay Time 140 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST SOFT RECOVERY
Voltage - Rated DC 600V
Max Power Dissipation 200W
Current Rating 55A
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 46 ns
Transistor Application POWER CONTROL
Rise Time 25ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 55A
Reverse Recovery Time 50 ns
JEDEC-95 Code TO-247AC
Input Capacitance 4nF
Turn On Time 71 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 27A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 55A
Turn Off Time-Nom (toff) 370 ns
Gate Charge 180nC
Current - Collector Pulsed (Icm) 220A
Td (on/off) @ 25°C 46ns/140ns
Switching Energy 990μJ (on), 590μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 24.99mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
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