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IRG4PF50WDPBF Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Infineon
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 900V
Collector-Emitter Saturation Voltage 2.25V
Number of Elements 1 Element
Test Conditions 720V, 28A, 5 Ω, 15V
Turn Off Delay Time 150 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1998
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 900V
Max Power Dissipation 200W
Terminal Position SINGLE
Current Rating 51A
Element Configuration Dual
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 71 ns
Transistor Application POWER CONTROL
Rise Time 52ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 51A
Reverse Recovery Time 90 ns
JEDEC-95 Code TO-247AC
Turn On Time 121 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 28A
Turn Off Time-Nom (toff) 460 ns
Gate Charge 160nC
Current - Collector Pulsed (Icm) 204A
Td (on/off) @ 25°C 71ns/150ns
Switching Energy 2.63mJ (on), 1.34mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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