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IRG4PH40UPBF Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Infineon
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 2.43V
Number of Elements 1 Element
Test Conditions 960V, 21A, 10 Ω, 15V
Turn Off Delay Time 220 ns
Published 2000
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 1.2kV
Max Power Dissipation 160W
Current Rating 41A
Element Configuration Single
Power Dissipation 160W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 24 ns
Transistor Application POWER CONTROL
Rise Time 18ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.1V
Max Collector Current 41A
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 49 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 21A
Turn Off Time-Nom (toff) 690 ns
Gate Charge 86nC
Current - Collector Pulsed (Icm) 82A
Td (on/off) @ 25°C 24ns/220ns
Switching Energy 1.04mJ (on), 3.4mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 3V
Fall Time-Max (tf) 190ns
Width 5.3mm
Height 20.3mm
Length 15.875mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IRG4PH40UPBF Documents

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