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IRG4PSC71UDPBF Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Infineon
Factory Lead Time 13 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-274AA
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.95V
Number of Elements 1 Element
Test Conditions 480V, 60A, 5 Ω, 15V
Turn Off Delay Time 245 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 350W
Current Rating 85A
Element Configuration Single
Power Dissipation 350W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 90 ns
Transistor Application POWER CONTROL
Rise Time 94ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 85A
Reverse Recovery Time 82 ns
Turn On Time 179 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A
Max Junction Temperature (Tj) 150°C
Continuous Collector Current 85A
Turn Off Time-Nom (toff) 503 ns
Gate Charge 340nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 90ns/245ns
Switching Energy 3.26mJ (on), 2.27mJ (off)
Height 24.8mm
Length 16.1mm
Width 5.3mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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