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IRGB14C40LPBF Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Infineon
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3Pins
Weight 6.000006g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 430V
Collector-Emitter Saturation Voltage 1.4V
Number of Elements 1 Element
Turn Off Delay Time 6 μs
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2000
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW SATURATION VOLTAGE
Voltage - Rated DC 430V
Max Power Dissipation 125W
Current Rating 14A
Element Configuration Single
Power Dissipation 125W
Case Connection COLLECTOR
Input Type Logic
Turn On Delay Time 900 ns
Clamping Voltage 430V
Transistor Application AUTOMOTIVE IGNITION
Rise Time 2.4μs
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.75V
Max Collector Current 20A
JEDEC-95 Code TO-220AB
Turn On Time 3700 ns
Vce(on) (Max) @ Vge, Ic 1.75V @ 5V, 14A
Gate Charge 27nC
Td (on/off) @ 25°C 900ns/6μs
Gate-Emitter Voltage-Max 12V
Gate-Emitter Thr Voltage-Max 2.2V
Height 15.24mm
Length 10.5156mm
Width 4.69mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
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