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IRGP35B60PDPBF Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Infineon
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 600V
Collector-Emitter Saturation Voltage 1.85V
Number of Elements 1 Element
Test Conditions 390V, 22A, 3.3 Ω, 15V
Turn Off Delay Time 110 ns
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination Through Hole
ECCN Code EAR99
Additional Feature HIGH RELIABILITY, LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 308W
Current Rating 60A
Element Configuration Single
Power Dissipation 308W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 26 ns
Transistor Application POWER CONTROL
Rise Time 6ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.55V
Max Collector Current 60A
Reverse Recovery Time 42 ns
JEDEC-95 Code TO-247AC
Turn On Time 34 ns
Vce(on) (Max) @ Vge, Ic 2.55V @ 15V, 35A
Turn Off Time-Nom (toff) 142 ns
IGBT Type NPT
Gate Charge 160nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 26ns/110ns
Switching Energy 220μJ (on), 215μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 20.7mm
Length 15.87mm
Width 5.3086mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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