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IRLL014NTRPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 12 Weeks
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Number of Pins 3Pins
Transistor Element Material SILICON
Turn Off Delay Time 14 ns
Power Dissipation (Max) 1W Ta
Number of Elements 1 Element
Drive Voltage (Max Rds On, Min Rds On) 4V 10V
Current - Continuous Drain (Id) @ 25℃ 2A Ta
Series HEXFET®
Published 1999
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Resistance 200mOhm
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Voltage - Rated DC 55V
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 2A
JESD-30 Code R-PDSO-G4
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 5.1 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 140m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Rise Time 4.9ns
Vgs (Max) ±16V
Fall Time (Typ) 2.9 ns
Continuous Drain Current (ID) 2A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 2A
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Recovery Time 61 ns
Nominal Vgs 2 V
Width 3.7mm
Length 6.6802mm
Height 1.4478mm
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free
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