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IRLL024NTRPBF Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer Infineon
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3Pins
Transistor Element Material SILICON
Manufacturer Package Identifier IRLL024NTRPBF
Current - Continuous Drain (Id) @ 25℃ 3.1A Ta
Drive Voltage (Max Rds On, Min Rds On) 4V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1W Ta
Turn Off Delay Time 18 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series HEXFET®
Published 1999
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Resistance 65mOhm
Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Voltage - Rated DC 55V
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 3.1A
JESD-30 Code R-PDSO-G4
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 7.4 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15.6nC @ 5V
Rise Time 21ns
Vgs (Max) ±16V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 3.1A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 55V
Dual Supply Voltage 55V
Recovery Time 58 ns
Max Junction Temperature (Tj) 150°C
Nominal Vgs 2 V
Height 1.8mm
Length 6.6802mm
Width 3.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free
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