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- PTFA212001EV4R250XTMA1
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PTFA212001EV4R250XTMA1
| Transistors - FETs, MOSFETs - RF | ||
| Infineon | ||
| Factory Lead Time | 12 Weeks | |
| Surface Mount | YES | |
| Package / Case | 2-Flatpack, Fin Leads | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Published | 2009 | |
| Packaging | Tape & Reel (TR) | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Additional Feature | HIGH RELIABILITY | |
| Current Rating (Amps) | 10μA | |
| Terminal Position | DUAL |
| Reach Compliance Code | unknown | |
| Current Rating | 10μA | |
| Frequency | 2.14GHz | |
| Base Part Number | PTFA212001 | |
| JESD-30 Code | R-XDFM-F2 | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Type | LDMOS | |
| Continuous Drain Current (ID) | 1.6A | |
| Gate to Source Voltage (Vgs) | 12V | |
| Gain | 15.8dB | |
| Drain to Source Breakdown Voltage | 65V | |
| Power - Output | 50W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Voltage - Test | 30V | |
| RoHS Status | RoHS Compliant |
PTFA212001EV4R250XTMA1
Download datasheets and manufacturer documentation for PTFA212001EV4R250XTMA1
- PCN Design/SpecificationLaser Marking Update 07/May/2015
- PCN Assembly/OriginNew Wafer Carrier 28/Oct/2014
- PCN PackagingCover Tape Variations 22/Oct/2014
- Other Related DocumentsPart Number Guide
- PCN Obsolescence/ EOLMult Device EOL 25/Jul/2017
- DatasheetsPTFA212001E,F
- ConflictMineralStatementInfineon-company-51.pdf
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