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SKB02N120ATMA1 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Infineon
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 1 Element
Test Conditions 800V, 2A, 91 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code no
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 62W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 62W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 6.2A
Reverse Recovery Time 50 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 40 ns
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 2A
Turn Off Time-Nom (toff) 375 ns
IGBT Type NPT
Gate Charge 11nC
Current - Collector Pulsed (Icm) 9.6A
Td (on/off) @ 25°C 23ns/260ns
Switching Energy 220μJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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