SMBTA06UPNE6327HTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer Infineon
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 80V
Number of Elements 2 Elements
hFEMin 100
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 80V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 500mA
Frequency 100MHz
Pin Count 6
Polarity NPN, PNP
Power Dissipation 330mW
Halogen Free Not Halogen Free
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 80V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 4V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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