Infineon Technologies AG IRF6714MPBF Specialized Transistors
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IRF6714MPBF Tech Specifications
| Category | Transistors - Special Purpose | |
| Manufacturer | Infineon | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | CHIP CARRIER, R-XBCC-N3 | |
| Drain Current-Max (ID) | 29 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| ECCN Code | EAR99 | |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| JESD-30 Code | R-XBCC-N3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.0021 Ω | |
| Pulsed Drain Current-Max (IDM) | 234 A | |
| DS Breakdown Voltage-Min | 25 V | |
| Avalanche Energy Rating (Eas) | 175 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 89 W |
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IRF6714MPBF Documents
Download datasheets and manufacturer documentation for IRF6714MPBF
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