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6116LA55DB Tech Specifications
| Category | Memory | |
| Manufacturer | IDT | |
| Factory Lead Time | 10 Weeks | |
| Mount | Through Hole | |
| Package / Case | CDIP | |
| Number of Pins | 24Pins | |
| Memory Types | RAM, SDR, SRAM - Asynchronous | |
| Usage Level | Military grade | |
| Packaging | Bulk | |
| Published | 2013 | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 24Terminations | |
| Terminal Finish | Tin/Lead (Sn63Pb37) | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -55°C | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | 240 | |
| Number of Functions | 1Function | |
| Supply Voltage | 5V | |
| Terminal Pitch | 2.54mm | |
| Pin Count | 24 | |
| Operating Supply Voltage | 5V | |
| Power Supplies | 5V |
| Temperature Grade | MILITARY | |
| Interface | Parallel | |
| Max Supply Voltage | 5.5V | |
| Min Supply Voltage | 4.5V | |
| Memory Size | 2kB | |
| Number of Ports | 1Port | |
| Nominal Supply Current | 85mA | |
| Access Time | 55 ns | |
| Organization | 2KX8 | |
| Output Characteristics | 3-STATE | |
| Address Bus Width | 11b | |
| Density | 16 kb | |
| Standby Current-Max | 0.0003A | |
| Screening Level | MIL-STD-883 Class B | |
| I/O Type | COMMON | |
| Sync/Async | Asynchronous | |
| Word Size | 8b | |
| Standby Voltage-Min | 2V | |
| Length | 32mm | |
| Height Seated (Max) | 4.826mm | |
| Width | 15.24mm | |
| Thickness | 2.9mm | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant | |
| Lead Free | Contains Lead |
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6116LA55DB Documents
Download datasheets and manufacturer documentation for 6116LA55DB
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