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HGT1S20N35G3VLS Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer Intersil
Surface Mount YES
Number of Terminals 2Terminals
Transistor Element Material SILICON
Package Description TO-263AB, 3 PIN
Package Style SMALL OUTLINE
Moisture Sensitivity Levels 1
Package Body Material PLASTIC/EPOXY
Turn-off Time-Nom (toff) 15000 ns
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 175 °C
Rohs Code Yes
Manufacturer Part Number HGT1S20N35G3VLS
Package Shape RECTANGULAR
Manufacturer Fairchild Semiconductor Corporation
Number of Elements 1 Element
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Risk Rank 5.04
Part Package Code D2PAK
JESD-609 Code e3
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Case Connection COLLECTOR
Transistor Application AUTOMOTIVE IGNITION
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-263AB
Power Dissipation-Max (Abs) 150 W
Collector Current-Max (IC) 20 A
Collector-Emitter Voltage-Max 320 V
Gate-Emitter Voltage-Max 12 V
Gate-Emitter Thr Voltage-Max 2.3 V
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