HFA3046BZ Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Intersil
Factory Lead Time 2 Weeks
Contact Plating Tin
Mount Surface Mount
Package / Case SOIC
Number of Pins 14Pins
Collector-Emitter Breakdown Voltage 12V
Collector-Emitter Saturation Voltage 500mV
Frequency(Max) 8GHz
Number of Elements 5 Elements
Power Dissipation (Max) 150mW
Packaging Bulk
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 14Terminations
ECCN Code EAR99
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Voltage - Rated DC 8V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 65mA
Frequency 8GHz
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 14
Polarity NPN
Configuration COMPLEX
Power Dissipation 150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 8 GHz
Collector Emitter Voltage (VCEO) 8V
Max Collector Current 65mA
JEDEC-95 Code MS-012AB
Transition Frequency 8000MHz
Frequency - Transition 8GHz
Collector Base Voltage (VCBO) 12V
Emitter Base Voltage (VEBO) 5.5V
DC Current Gain-Min (hFE) 40
Continuous Collector Current 65mA
Height 1.5mm
Length 8.75mm
Width 4mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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