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- IS62WV12816BLL-55B2LI
ISSI, Integrated Silicon Solution Inc IS62WV12816BLL-55B2LI Memory ICs
Tray 3V SRAM
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IS62WV12816BLL-55B2LI Tech Specifications
| Category | Memory | |
| Manufacturer | ISSI | |
| Factory Lead Time | 8 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 48-TFBGA | |
| Number of Pins | 48Pins | |
| Memory Types | Volatile | |
| Operating Temperature | -40°C~85°C TA | |
| Packaging | Tray | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) | |
| Number of Terminations | 48Terminations | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Voltage - Supply | 2.5V~3.6V | |
| Terminal Position | BOTTOM | |
| Peak Reflow Temperature (Cel) | 260 | |
| Number of Functions | 1Function | |
| Supply Voltage | 3V | |
| Terminal Pitch | 0.75mm | |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 48 | |
| Operating Supply Voltage | 3.3V | |
| Supply Voltage-Max (Vsup) | 3.6V | |
| Supply Voltage-Min (Vsup) | 2.5V | |
| Memory Size | 2Mb 128K x 16 | |
| Number of Ports | 1Port | |
| Nominal Supply Current | 3mA | |
| Memory Format | SRAM | |
| Memory Interface | Parallel | |
| Output Characteristics | 3-STATE | |
| Memory Width | 16 | |
| Write Cycle Time - Word, Page | 55ns | |
| Address Bus Width | 17b | |
| Density | 2 Mb | |
| Access Time (Max) | 55 ns | |
| I/O Type | COMMON | |
| Sync/Async | Asynchronous | |
| Word Size | 16b | |
| Standby Voltage-Min | 1V | |
| Length | 8mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
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