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IXGH50N90B2D1 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer IXYS
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Weight 6.500007g
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 900V
Collector-Emitter Saturation Voltage 2.2V
Number of Elements 1 Element
Test Conditions 720V, 50A, 5 Ω, 15V
Turn Off Delay Time 350 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFAST™
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 400W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*50N90
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 400W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 20 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 75A
Reverse Recovery Time 200ns
JEDEC-95 Code TO-247AD
Turn On Time 48 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A
Turn Off Time-Nom (toff) 820 ns
IGBT Type PT
Gate Charge 135nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 20ns/350ns
Switching Energy 4.7mJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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