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IXTP160N10T Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer IXYS
Factory Lead Time 17 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 160A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 430W Tc
Turn Off Delay Time 49 ns
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchMV™
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Pin Count 3
JESD-30 Code R-PSFM-T3
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 430W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6600pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 132nC @ 10V
Rise Time 61ns
Vgs (Max) ±30V
Fall Time (Typ) 42 ns
Continuous Drain Current (ID) 160A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.007Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 430A
Avalanche Energy Rating (Eas) 500 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IXTP160N10T Documents

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