IXYS IXTQ69N30P Single MOSFETs Transistors
200A 69A
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IXTQ69N30P Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | IXYS | |
| Factory Lead Time | 24 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 69A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 500W Tc | |
| Turn Off Delay Time | 75 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| Series | PolarHT™ | |
| Published | 2006 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Pure Tin (Sn) | |
| Additional Feature | AVALANCHE RATED | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| Qualification Status | Not Qualified | |
| Element Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 500W | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 49m Ω @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 4960pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 10V | |
| Rise Time | 25ns | |
| Vgs (Max) | ±20V | |
| Fall Time (Typ) | 27 ns | |
| Continuous Drain Current (ID) | 69A | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain-source On Resistance-Max | 0.049Ohm | |
| Drain to Source Breakdown Voltage | 300V | |
| Pulsed Drain Current-Max (IDM) | 200A | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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IXTQ69N30P Documents
Download datasheets and manufacturer documentation for IXTQ69N30P
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