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IXYH30N120C3D1 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer IXYS
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 3.7V
Number of Elements 1 Element
Test Conditions 600V, 30A, 10 Ω, 15V
Turn Off Delay Time 126 ns
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series GenX3™, XPT™
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Max Power Dissipation 416W
Element Configuration Single
Power Dissipation 416W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 23 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 66A
Reverse Recovery Time 195ns
JEDEC-95 Code TO-247AD
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 71 ns
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 30A
Turn Off Time-Nom (toff) 296 ns
Gate Charge 69nC
Current - Collector Pulsed (Icm) 133A
Td (on/off) @ 25°C 19ns/130ns
Switching Energy 2.6mJ (on), 1.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 21.46mm
Length 16.26mm
Width 5.3mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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IXYH30N120C3D1 Documents

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