IXYS MID100-12A3 IGBTs Modules
1200V 560W
IN STOCK
: 25
Min. : 1
Mult. : 1
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MID100-12A3 Tech Specifications
| Category | Transistors - IGBTs - Modules | |
| Manufacturer | IXYS | |
| Factory Lead Time | 24 Weeks | |
| Mount | Chassis Mount, Screw | |
| Mounting Type | Chassis Mount | |
| Package / Case | Y4-M5 | |
| Number of Pins | 7Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 1.2kV | |
| Collector-Emitter Saturation Voltage | 1.2kV | |
| Number of Elements | 1 Element | |
| Operating Temperature | -40°C~150°C TJ | |
| Packaging | Bulk | |
| Published | 2013 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 5Terminations | |
| Additional Feature | UL RECOGNIZED | |
| Max Power Dissipation | 560W | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Base Part Number | MID |
| JESD-30 Code | R-XUFM-X5 | |
| Configuration | Single | |
| Case Connection | ISOLATED | |
| Power - Max | 560W | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Input | Standard | |
| Collector Emitter Voltage (VCEO) | 1.2kV | |
| Max Collector Current | 135A | |
| Current - Collector Cutoff (Max) | 5mA | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Input Capacitance | 5.5nF | |
| Turn On Time | 150 ns | |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 75A | |
| Turn Off Time-Nom (toff) | 700 ns | |
| IGBT Type | NPT | |
| NTC Thermistor | No | |
| Gate-Emitter Voltage-Max | 20V | |
| Input Capacitance (Cies) @ Vce | 5.5nF @ 25V | |
| VCEsat-Max | 3 V | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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MID100-12A3 Documents
Download datasheets and manufacturer documentation for MID100-12A3
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