MII300-12A4 Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer IXYS
Factory Lead Time 28 Weeks
Package / Case Y3-DCB
Mounting Type Chassis Mount
Mount Chassis Mount, Screw
Number of Pins 7Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Number of Elements 2 Elements
Published 2009
Operating Temperature -40°C~150°C TJ
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7Terminations
Additional Feature UL RECOGNIZED
Max Power Dissipation 1.38kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number MII
Pin Count 7
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1380W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 330A
Current - Collector Cutoff (Max) 13mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 13nF
Turn On Time 160 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 200A
Turn Off Time-Nom (toff) 690 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 13nF @ 25V
Height 30mm
Length 110mm
Width 62mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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