MIXA10WB1200TED Tech Specifications

Category Transistors - IGBTs - Modules
Manufacturer IXYS
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E2
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.2kV
Collector-Emitter Saturation Voltage 1.2kV
Number of Elements 7 Elements
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2011
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 24Terminations
Additional Feature UL RECOGNIZED
Max Power Dissipation 60W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 24
JESD-30 Code R-XUFM-X24
Qualification Status Not Qualified
Configuration Three Phase Inverter with Brake
Power Dissipation 60W
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Three Phase Bridge Rectifier
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 17A
Current - Collector Cutoff (Max) 700μA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 9A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
RoHS Status ROHS3 Compliant
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