KEC KRC855E Single BJT Transistors
0.1 A 80 50 V
IN STOCK
Min. : 1
Mult. : 1
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KRC855E Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | KEC | |
| Surface Mount | YES | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | KEC CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-F6 | |
| Number of Elements | 2 Elements | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Transition Frequency-Nom (fT) | 200 MHz | |
| ECCN Code | EAR99 |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 21.36 | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-F6 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 80 | |
| Collector-Emitter Voltage-Max | 50 V |
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KRC855E Documents
Download datasheets and manufacturer documentation for KRC855E
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