KYOCERA Corporation PBMB200B12 Single IGBTs
IN STOCK
Min. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please sendRFQ, we will respond immediately
PBMB200B12 Tech Specifications
| Category | Transistors - IGBTs - Single | |
| Manufacturer | KYOCERA | |
| Surface Mount | NO | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | KYOCERA CORP | |
| Package Description | FLANGE MOUNT, R-XUFM-X8 | |
| Number of Elements | 4 Elements | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Turn-off Time-Nom (toff) | 800 ns | |
| Turn-on Time-Nom (ton) | 400 ns |
| ECCN Code | EAR99 | |
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-XUFM-X8 | |
| Qualification Status | Not Qualified | |
| Configuration | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE | |
| Case Connection | ISOLATED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 960 W | |
| Collector Current-Max (IC) | 200 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| VCEsat-Max | 2.4 V |
Select at least one checkbox above to show similar products in this category.
PBMB200B12 Documents
Download datasheets and manufacturer documentation for PBMB200B12
Index :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ