Leshan LN2502LT1G MOSFETs Transistors Arrays
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LN2502LT1G Tech Specifications
| Category | Transistors - FETs, MOSFETs - Arrays | |
| Manufacturer | Leshan | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Drain Current-Max (ID) | 4.2 A | |
| Risk Rank | 5.65 | |
| Ihs Manufacturer | LESHAN RADIO CO LTD | |
| Part Life Cycle Code | Contact Manufacturer | |
| Number of Elements | 1 Element | |
| Manufacturer | LRC Leshan Radio Co Ltd | |
| Package Shape | RECTANGULAR | |
| Manufacturer Part Number | LN2502LT1G | |
| Rohs Code | Yes | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Style | SMALL OUTLINE |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| ECCN Code | EAR99 | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-236AB | |
| Drain Current-Max (Abs) (ID) | 4.2 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| DS Breakdown Voltage-Min | 20 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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