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IXFA102N15T Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Littelfuse
Package / Case TO-263-3
EU RoHS Compliant
Automotive No
PPAP No
Category Power MOSFET
Process Technology HiperFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 150
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 102
Maximum Drain Source Resistance (mOhm) 18@10V
Typical Gate Charge @ Vgs (nC) 87@10V
Typical Gate Charge @ 10V (nC) 87
Typical Input Capacitance @ Vds (pF) 5220@25V
Maximum Power Dissipation (mW) 455000
Typical Fall Time (ns) 22
Typical Rise Time (ns) 14
Typical Turn-Off Delay Time (ns) 25
Typical Turn-On Delay Time (ns) 20
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Mounting Surface Mount
Package Height 4.83(Max)
Package Width 9.65(Max)
Package Length 10.29(Max)
PCB changed 2
Tab Tab
Supplier Package TO-263AA
Vds - Drain-Source Breakdown Voltage 150 V
Transistor Polarity N-Channel
Mounting Styles SMD/SMT
Id - Continuous Drain Current 102 A
Part Status Active
Technology Si
Pin Count 3
Configuration Single
Number of Channels 1 ChannelChannel
Channel Type N
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