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IXFA110N15T2-TRL Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Littelfuse
Package / Case TO-263-3
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
Category Power MOSFET
Process Technology HiperFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 150
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 110
Maximum Drain Source Resistance (mOhm) 13@10V
Typical Gate Charge @ Vgs (nC) 150@10V
Typical Gate Charge @ 10V (nC) 150
Typical Input Capacitance @ Vds (pF) 8600@25V
Maximum Power Dissipation (mW) 480000
Typical Fall Time (ns) 18
Typical Rise Time (ns) 16
Typical Turn-Off Delay Time (ns) 33
Typical Turn-On Delay Time (ns) 33
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Mounting Surface Mount
Package Height 4.83(Max)
Package Width 9.4(Max)
Package Length 10.41(Max)
PCB changed 2
Tab Tab
Standard Package Name TO-263
Supplier Package D2PAK
Lead Shape Gull-wing
Vds - Drain-Source Breakdown Voltage 150 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Pd - Power Dissipation 480 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Qg - Gate Charge 150 nC
Rds On - Drain-Source Resistance 13 mOhms
Id - Continuous Drain Current 110 A
Packaging Tape and Reel
Series TrenchT2
Part Status Active
Technology Si
Pin Count 3
Configuration Single
Number of Channels 1 ChannelChannel
Channel Type N
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