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IXFA12N50P-TRL Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Littelfuse
Package / Case TO-263-3
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
Category Power MOSFET
Process Technology HiperFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 500
Maximum Gate Source Voltage (V) ±30
Maximum Continuous Drain Current (A) 12
Maximum Drain Source Resistance (mOhm) 500@10V
Typical Gate Charge @ Vgs (nC) 29@10V
Typical Gate Charge @ 10V (nC) 29
Typical Input Capacitance @ Vds (pF) 1830@25V
Maximum Power Dissipation (mW) 200000
Typical Fall Time (ns) 20
Typical Rise Time (ns) 27
Typical Turn-Off Delay Time (ns) 65
Typical Turn-On Delay Time (ns) 22
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 4.83(Max)
Package Width 9.65(Max)
Package Length 10.41(Max)
PCB changed 2
Tab Tab
Supplier Package D2PAK
Vds - Drain-Source Breakdown Voltage 500 V
Vgs th - Gate-Source Threshold Voltage 3 V
Pd - Power Dissipation 200 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 30 V, + 30 V
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Qg - Gate Charge 29 nC
Rds On - Drain-Source Resistance 500 mOhms
Id - Continuous Drain Current 12 A
Packaging Tape and Reel
Series POLAR
Part Status Active
Technology Si
Pin Count 3
Configuration Single
Number of Channels 1 ChannelChannel
Channel Type N
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