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IXFA7N80P Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Littelfuse
EU RoHS Compliant
Automotive No
PPAP No
Category Power MOSFET
Process Technology HiperFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 800
Maximum Gate Source Voltage (V) ±30
Maximum Continuous Drain Current (A) 7
Maximum Drain Source Resistance (mOhm) 1440@10V
Typical Gate Charge @ Vgs (nC) 32@10V
Typical Gate Charge @ 10V (nC) 32
Typical Input Capacitance @ Vds (pF) 1800@25V
Maximum Power Dissipation (mW) 200000
Typical Fall Time (ns) 24
Typical Rise Time (ns) 32
Typical Turn-Off Delay Time (ns) 55
Typical Turn-On Delay Time (ns) 28
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 4.7(Max)
Package Width 9.4(Max)
Package Length 10.41(Max)
PCB changed 2
Tab Tab
Supplier Package D2PAK
Part Status Active
Pin Count 3
Configuration Single
Channel Type N
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