IXFH60N50P3 Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Littelfuse
EU RoHS Compliant with Exemption
ECCN (US) EAR99
HTS 8541.59.00.80
SVHC Yes
SVHC Exceeds Threshold Yes
Automotive No
PPAP No
Category Power MOSFET
Process Technology Polar3 HiperFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 500
Maximum Gate Source Voltage (V) ±30
Maximum Continuous Drain Current (A) 60
Maximum Drain Source Resistance (MOhm) 110@10V
Typical Gate Charge @ Vgs (nC) 96@10V
Typical Gate Charge @ 10V (nC) 96
Typical Input Capacitance @ Vds (pF) 6250@25V
Maximum Power Dissipation (mW) 1040000
Typical Fall Time (ns) 8
Typical Rise Time (ns) 16
Typical Turn-Off Delay Time (ns) 37
Typical Turn-On Delay Time (ns) 18
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 21.45(Max)
Package Width 5.3(Max)
Package Length 16.24(Max)
PCB changed 3
Tab Tab
Standard Package Name TO-247
Supplier Package TO-247AD
Lead Shape Through Hole
Part Status Active
Pin Count 3
Configuration Single
Channel Type N
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