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IXFX320N17T2 Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Littelfuse
EU RoHS Compliant with Exemption
ECCN (US) EAR99
HTS 8541.29.00.95
SVHC Yes
SVHC Exceeds Threshold Yes
Automotive No
PPAP No
Category Power MOSFET
Process Technology GigaMOS
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 170
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 320
Maximum Drain Source Resistance (mOhm) 5.2@10V
Typical Gate Charge @ Vgs (nC) 640@10V
Typical Gate Charge @ 10V (nC) 640
Typical Input Capacitance @ Vds (pF) 45@25V
Maximum Power Dissipation (mW) 1670000
Typical Fall Time (ns) 230
Typical Rise Time (ns) 170
Typical Turn-Off Delay Time (ns) 115
Typical Turn-On Delay Time (ns) 46
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Mounting Through Hole
Package Height 21.34(Max)
Package Width 5.21(Max)
Package Length 16.13(Max)
PCB changed 3
Tab Tab
Supplier Package PLUS 247
Part Status Active
Pin Count 3
Configuration Single
Channel Type N
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