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IXTA10P50P Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Littelfuse
EU RoHS Compliant with Exemption
ECCN (US) EAR99
HTS 8541.29.00.95
SVHC Yes
SVHC Exceeds Threshold Yes
Automotive No
PPAP No
Category Power MOSFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 500
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 4.5
Operating Junction Temperature (°C) -55 to 150
Maximum Continuous Drain Current (A) 10
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 10
Maximum Drain Source Resistance (MOhm) 1000@10V
Typical Gate Charge @ Vgs (nC) 50@10V
Typical Gate Charge @ 10V (nC) 50
Typical Gate to Drain Charge (nC) 18
Typical Gate to Source Charge (nC) 17
Typical Reverse Recovery Charge (nC) 5900
Typical Input Capacitance @ Vds (pF) 2840@25V
Typical Reverse Transfer Capacitance @ Vds (pF) 42@25V
Minimum Gate Threshold Voltage (V) 2
Typical Output Capacitance (pF) 275
Maximum Power Dissipation (mW) 300000
Typical Fall Time (ns) 44
Typical Rise Time (ns) 28
Typical Turn-Off Delay Time (ns) 52
Typical Turn-On Delay Time (ns) 20
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Maximum Positive Gate Source Voltage (V) 20
Maximum Pulsed Drain Current @ TC=25°C (A) 30
Typical Gate Plateau Voltage (V) 5.3
Typical Reverse Recovery Time (ns) 414
Maximum Diode Forward Voltage (V) 3
Mounting Surface Mount
Package Height 4.83(Max)
Package Width 9.65(Max)
Package Length 10.41(Max)
PCB changed 2
Tab Tab
Standard Package Name TO-263
Supplier Package D2PAK
Lead Shape Gull-wing
Part Status Active
Pin Count 3
Configuration Single
Channel Type P
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