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IXTK150N15P Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Littelfuse
Package / Case TO-264-3
EU RoHS Compliant with Exemption
ECCN (US) EAR99
HTS 8541.29.00.95
Automotive No
PPAP No
Category Power MOSFET
Process Technology PolarHT
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 150
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 150
Maximum Drain Source Resistance (MOhm) 13@10V
Typical Gate Charge @ Vgs (nC) 190@10V
Typical Gate Charge @ 10V (nC) 190
Typical Input Capacitance @ Vds (pF) 5800@25V
Maximum Power Dissipation (mW) 714000
Typical Fall Time (ns) 28
Typical Rise Time (ns) 33
Typical Turn-Off Delay Time (ns) 100
Typical Turn-On Delay Time (ns) 30
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Mounting Through Hole
Package Height 26.16(Max)
Package Width 5.13(Max)
Package Length 19.96(Max)
PCB changed 3
Tab Tab
Supplier Package TO-264
Vds - Drain-Source Breakdown Voltage 150 V
Vgs th - Gate-Source Threshold Voltage 5 V
Pd - Power Dissipation 714 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Mounting Styles Through Hole
Qg - Gate Charge 190 nC
Rds On - Drain-Source Resistance 13 mOhms
Id - Continuous Drain Current 150 A
Part Status Active
Technology Si
Pin Count 3
Configuration Single
Number of Channels 1 ChannelChannel
Channel Type N
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