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IXTK170P10P Tech Specifications

Category Transistors - FETs, MOSFETs - Arrays
Manufacturer Littelfuse
EU RoHS Compliant with Exemption
ECCN (US) EAR99
HTS 8541.29.00.95
Automotive No
PPAP No
Category Power MOSFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 100
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 170
Maximum Drain Source Resistance (MOhm) 14@10V
Typical Gate Charge @ Vgs (nC) 240@10V
Typical Gate Charge @ 10V (nC) 240
Typical Input Capacitance @ Vds (pF) 12600@25V
Maximum Power Dissipation (mW) 890000
Typical Fall Time (ns) 45
Typical Rise Time (ns) 75
Typical Turn-Off Delay Time (ns) 82
Typical Turn-On Delay Time (ns) 32
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 26.16(Max)
Package Width 5.13(Max)
Package Length 19.96(Max)
PCB changed 3
Tab Tab
Supplier Package TO-264AA
MSL -
Qualification -
Continuous Drain Current Id 170A
Part Status Active
Pin Count 3
Configuration Single
Power Dissipation 890W
Channel Type P
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